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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 33, Number 11(2) (2021)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 3941-3948
S&M2735 Research Paper of Special Issue https://doi.org/10.18494/SAM.2021.3706 Published: November 25, 2021 Effects of Annealing Temperature on Structural and Optoelectronic Properties of Zr-doped ZnO Thin Films for Photosensors [PDF] Ming-Yu Yen, Tao-Hsing Chen, Po-Hsun Lai, Sheng-Lung Tu, and Yun-Hwei Shen (Received May 29, 2021; Accepted November 8, 2021) Keywords: Zr-doped ZnO, annealing temperature, optical property, electrical property
We investigated the effects of the annealing temperature on the optoelectronic properties of Zr-doped ZnO (ZZO) thin films deposited on glass substrates by radio frequency sputtering and annealed at 200, 300, and 400 °C. It was found by X-ray diffraction analysis that all the deposited thin films had a hexagonal crystal structure with polycrystalline grains oriented along the (0 0 2) direction. Furthermore, the film annealed at 400 ℃ had the lowest resistivity among the films due to the growth of grains, as well as the lowest resistivity of 1.5 × 10−2 Ω·cm, a mobility of 35 cm2V−1s−1, and a carrier concentration of 4.2 × 1019 cm−3. It also had a maximum transmittance of 95% and an energy gap of 3.2 eV. These results show that ZZO thin films subjected to annealing at 400 ℃ are promising for use as stable photosensors.
Corresponding author: Tao-Hsing Chen, Sheng-Lung Tu  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Ming-Yu Yen, Tao-Hsing Chen, Po-Hsun Lai, Sheng-Lung Tu, and Yun-Hwei Shen, Effects of Annealing Temperature on Structural and Optoelectronic Properties of Zr-doped ZnO Thin Films for Photosensors, Sens. Mater., Vol. 33, No. 11, 2021, p. 3941-3948. |
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