S&M Young Researcher Paper Award 2020
Recipients: Ding Jiao, Zao Ni, Jiachou Wang, and Xinxin Li [Winner's comments]
Paper: High Fill Factor Array of Piezoelectric Micromachined
Ultrasonic Transducers with Large Quality Factor

S&M Young Researcher Paper Award 2021
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Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.

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S&M2802 Research Paper of Special Issue
Published in advance: November 29, 2021

Optical and Electrical Properties of Mn-doped and Mn-Al co-doped ZnO Thin Films Annealed at Different Temperatures for Photosensor Applications [PDF]

Ming-Yu Yen, Tao-Hsing Chen, Po-Hsun Lai, Sheng-Lung Tu, Yun-Hwei Shen, and Chun-Chieh Huang

(Received May 23, 2021; Accepted September 22, 2021)

Keywords: Mn-doped ZnO, Mn-Al co-doped ZnO, annealing, electrical, transmittance

Mn-doped and Mn-Al co-doped zinc oxide (ZnO) thin films were deposited on glass substrates by RF magnetron sputtering at room temperature. The X-ray diffraction results revealed that both films consisted of a single phase and had a wurtzite structure with a c-axis orientation. The electrical properties, transmittance characteristics, surface properties, and crystal structures of the films were investigated following annealing at temperatures ranging from 200 to 500 °C. The results showed that the as-deposited Mn:ZnO thin film had an average transmittance of 83%. The transmittance increased to 85% following annealing at 500 °C. The as-deposited Mn-Al co-doped ZnO thin film had a low transmittance of only 40%. However, after annealing at 500 °C, the transmittance increased to 83%. The annealed Mn-Al:ZnO thin film also showed a low electrical resistivity of 1.75 × 10−3 Ω·cm, an electron mobility of 20.8 cm2V−1s−1, and a carrier concentration of 5.3 × 1020 cm−3. Scanning electron microscopy (SEM) results showed that the crystal size of both thin films increased following annealing. Owing to their good optical and electrical properties, the annealed Mn-Al:ZnO thin films can be used as photosensor materials.

Corresponding author: Tao-Hsing Chen

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